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PD - 96160
IRLML6401GPBF
l l l l l l l l l
Ultra Low On-Resistance P-Channel MOSFET SOT-23 Footprint Low Profile (<1.1mm) Available in Tape and Reel Fast Switching 1.8V Gate Rated Lead-Free Halogen-Free
HEXFET(R) Power MOSFET
* ' 6
VDSS = -12V RDS(on) = 0.05
Description
These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET(R) power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in battery and load management. A thermally enhanced large pad leadframe has been incorporated into the standard SOT-23 package to produce a HEXFET Power MOSFET with the industry's smallest footprint. This package, dubbed the Micro3TM, is ideal for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the Micro3 allows it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards. The thermal resistance and power dissipation are the best available.
Micro3TM
Absolute Maximum Ratings
Parameter
VDS ID @ TA = 25C ID @ TA= 70C IDM PD @TA = 25C PD @TA = 70C EAS VGS TJ, TSTG Drain- Source Voltage Continuous Drain Current, VGS @ -4.5V Continuous Drain Current, VGS @ -4.5V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Gate-to-Source Voltage Junction and Storage Temperature Range
Max.
-12 -4.3 -3.4 -34 1.3 0.8 0.01 33 8.0 -55 to + 150
Units
V A W W/C mJ V C
Thermal Resistance
Parameter
RJA Maximum Junction-to-Ambient
Typ.
75
Max.
100
Units
C/W
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IRLML6401GPBF
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient V(BR)DSS RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. Typ. Max. Units Conditions -12 --- --- V VGS = 0V, ID = -250A --- -0.007 --- V/C Reference to 25C, ID = -1mA --- --- 0.050 VGS = -4.5V, ID = -4.3A --- 0.085 VGS = -2.5V, ID = -2.5A --- 0.125 VGS = -1.8V, ID = -2.0A -0.40 -0.55 -0.95 V VDS = VGS, ID = -250A 8.6 --- --- S VDS = -10V, ID = -4.3A --- --- -1.0 VDS = -12V, VGS = 0V A --- --- -25 VDS = -9.6V, VGS = 0V, TJ = 55C --- --- -100 VGS = -8.0V nA --- --- 100 VGS = 8.0V --- 10 15 ID = -4.3A --- 1.4 2.1 nC VDS = -10V --- 2.6 3.9 VGS = -5.0V --- 11 --- VDD = -6.0V ns --- 32 --- ID = -1.0A --- 250 --- RD = 6.0 --- 210 --- RG = 89 --- 830 --- VGS = 0V --- 180 --- pF VDS = -10V --- 125 --- = 1.0MHz
Source-Drain Ratings and Characteristics
IS
ISM
VSD t rr Q rr
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge
Min. Typ. Max. Units --- --- --- --- --- --- --- --- 22 8.0 -1.3 A -34 -1.2 33 12 V ns nC
Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25C, IS = -1.3A, VGS = 0V TJ = 25C, IF = -1.3A di/dt = -100A/s
D
S
Notes: max. junction temperature. Pulse width 300s; duty cycle 2%.
Repetitive rating; pulse width limited by
Surface mounted on 1" square single layer 1oz. copper FR4 board,
steady state.
Starting TJ = 25C, L = 3.5mH
RG = 25, IAS = -4.3A.
2
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IRLML6401GPBF
100
VGS -7.0V -5.0V -4.5V -3.0V -2.5V - 1.8V -1.5V BOTTOM -1.0V TOP
100
VGS -7.0V -5.0V -4.5V -3.0V -2.5V -1.8V -1.5V BOTTOM -1.0V TOP
-I D, Drain-to-Source Current (A)
10
-I D, Drain-to-Source Current (A)
10
1
1
-1.0V
-1.0V
0.1
0.1
20s PULSE WIDTH Tj = 25C
0.01 0.1 1 10 100
20s PULSE WIDTH Tj = 150C
0.01 0.1 1 10 100
-V DS , Drain-to-Source Voltage (V)
-VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100.0
2.0
-I D , Drain-to-Source Current ( )
T J = 25C
10.0
RDS(on) , Drain-to-Source On Resistance (Normalized)
ID = -4.3A
T J = 150C
1.5
1.0
1.0
0.5
VDS = -12V
0.1 1.0 1.5 2.0
20s PULSE WIDTH
2.5 3.0 3.5 4.0
0.0 -60 -40 -20
VGS = -4.5V
0 20 40 60 80 100 120 140 160
-V GS, Gate-to-Source Voltage (V)
TJ , Junction Temperature ( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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IRLML6401GPBF
1200 VGS = 0V, f = 1 MHZ Ciss = C + Cgd, C gs ds SHORTED Crss = C gd
10
ID = -4.3A VDS =-10V
1000
-VGS , Gate-to-Source Voltage (V)
C, Capacitance(pF)
800
Ciss
Coss = C + Cgd ds
8
6
600
4
400
200
Coss Crss
2
0 1 10 100
0
0
4
8
12
16
VDS, Drain-to-Source Voltage (V)
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
100
1000
-ISD , Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED BY RDS(on)
10
-ID , Drain Current (A) I
100 10us 10 100us 1ms 1 10ms
TJ = 150 C TJ = 25 C
1
0.1 0.2
V GS = 0 V
0.6 1.0 1.4 1.8
-VSD,Source-to-Drain Voltage (V)
0.1 0.1
TC = 25 C TJ = 150 C Single Pulse
1 10 100
-VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
4
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IRLML6401GPBF
5.0
EAS , Single Pulse Avalanche Energy (mJ)
80
4.0
-ID , Drain Current (A)
60
ID -1.9A -3.4A BOTTOM -4.3A TOP
3.0
40
2.0
20
1.0
0.0
25
50
TC , Case Temperature ( C)
75
100
125
150
0
25
Starting TJ , Junction Temperature ( C)
50
75
100
125
150
Fig 9. Maximum Drain Current Vs. Case Temperature
Fig 10. Maximum Avalanche Energy Vs. Drain Current
1000
Thermal Response (Z thJA )
100 D = 0.50 0.20 10 0.10 0.05 0.02 0.01 1 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.0001 0.001 0.01 0.1 1 10 PDM t1 t2
0.1 0.00001
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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IRLML6401GPBF
0.10
RDS ( on ) , Drain-to-Source On Resistance ( )
0.20 VGS = -1.8V 0.15 VGS = -2.5V
RDS(on) , Drain-to -Source Voltage ( )
0.09 0.08 0.07 0.06 0.05 0.04 0.03 0.02 1.0 2.0 3.0 4.0 5.0 6.0 7.0
0.10
Id = -4.3A
0.05
VGS = -4.5V
0.00 0 10 20 30 40 -I D , Drain Current ( A )
-VGS, Gate -to -Source Voltage ( V )
Fig 12. Typical On-Resistance Vs. Gate Voltage
Fig 13. Typical On-Resistance Vs. Drain Current
0.8
-VGS(th) Gate threshold Voltage (V)
0.7
0.6
ID = -250A
0.5
0.4
0.3 -75 -50 -25 0 25 50 75 100 125 150
T J , Temperature ( C )
Fig 14. Typical Threshold Voltage Vs. Junction Temperature
6
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IRLML6401GPBF
Micro3 (SOT-23) (Lead-Free) Package Outline
Dimensions are shown in millimeters (inches)
6 D A 5
DIMENSIONS
SYMBOL MILLIMETERS MIN MAX INCHES MIN MAX
3 6 E1 1 2
E
0.15 [0.006] M C B A
5
B
e e1
A A2 C H 4
L1
c
0.10 [0.004] C
L2 3X L 7
A1
3X b
0.20 [0.008] M C B A
A A1 A2 b c D E E1 e e1 L L1 L2
0.89 0.01 0.88 0.30 0.08 2.80 2.10 1.20 0.95 1.90 0.40 0.54 0.25 0
1.12 0.10 1.02 0.50 0.20 3.04 2.64 1.40 BSC BSC 0.60 REF BSC 8
"$
0.0004
"$ ! " '" #& "& &$ % !
0
## # # ! ' ! # $$ 7T8 7T8A !#
REF BSC 8
Recommended Footprint
0.972
0.950
NOTES: 1. DIMENSIONING & TOLERANCING PER ANSI Y14.5M-1994 2. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES]. 3. CONTROLLING DIMENSION: MILLIMETER. 4. DATUM PLANE H IS LOCATED AT THE MOLD PARTING LINE. 5. DATUM A AND B TO BE DETERMINED AT DATUM PLANE H. 6. DIMENSIONS D AND E1 ARE MEASURED AT DATUM PLANE H. DIMENSIONS DOES NOT INCLUDE MOLD PROTRUSIONS OR INTERLEAD FLASH. MOLD PROTRUSIONS OR INTERLEAD FLASH SHALL NOT EXCEED 0.25 MM [0.010 INCH] PER SIDE. 7. DIMENSION L IS THE LEAD LENGTH FOR SOLDERING TO A SUBSTRATE. 8. OUTLINE CONFORMS TO JEDEC OUTLINE TO-236 AB.
0.802
2.742
1.900
Micro3 (SOT-23 / TO-236AB) Part Marking Information
Micro3 / SOT-23 Package Marking
XA2A !%ADAAQS@8@9@9A7AG6TUA9DBDUAPAA86G@I96SA@6S
Y = YEAR W = WEEK
PART NUMBER
A YW LC
HALOGEN FREE INDICATOR LOT CODE
@6S ! !! !" !# !$ !% !& !' !( !
! " # $ % & ' (
XPSF X@@F ! " #
X 6 7 8 9
PART NUMBER CODE REFERENCE: A = IRLML2402 B =IRLML2803 C = IRLML2402 D = IRLML5103 E = IRLML6402 F = IRLML6401 G = IRLML2502 H = IRLML5203 Note: A line above the work week (as shown here) indicates Lead-free
!# !$ !% XPSF X@@F !& !' !( "
Y a
XA2A!&$!ADAAQS@8@9@9A7A6AG@UU@S @6S ! !! !" !# !$ !% !& !' !( ! 6 7 8 9 @ A B C E F X 6 7 8 9
$ $ $!
Y a
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Note: For the most current drawing please refer to IR website at http://www.irf.com/package
7
IRLML6401GPBF
Micro3TM Tape & Reel Information
Dimensions are shown in millimeters (inches)
2.05 ( .080 ) 1.95 ( .077 ) 4.1 ( .161 ) 3.9 ( .154 ) 1.6 ( .062 ) 1.5 ( .060 )
1.85 ( .072 ) 1.65 ( .065 )
1.32 ( .051 ) 1.12 ( .045 )
TR
3.55 ( .139 ) 3.45 ( .136 )
8.3 ( .326 ) 7.9 ( .312 )
FEED DIRECTION
4.1 ( .161 ) 3.9 ( .154 )
1.1 ( .043 ) 0.9 ( .036 )
0.35 ( .013 ) 0.25 ( .010 )
178.00 ( 7.008 ) MAX.
9.90 ( .390 ) 8.40 ( .331 ) NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 07/2008
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